• DocumentCode
    112962
  • Title

    Extraction of Propagation Delay-Correlated Mobility and Its Verification for Amorphous InGaZnO Thin-Film Transistor-Based Inverters

  • Author

    Kyung Min Lee ; Jaeman Jang ; Sung-Jin Choi ; Dong Myong Kim ; Kyung Rok Kim ; Dae Hwan Kim

  • Author_Institution
    Sch. of Electr. Eng., Kookmin Univ., Seoul, South Korea
  • Volume
    62
  • Issue
    5
  • fYear
    2015
  • fDate
    May-15
  • Firstpage
    1504
  • Lastpage
    1510
  • Abstract
    We found that field-effect mobility, which had been widely used in the evaluation of the mobility of an amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) failed to describe the effect of mobility on propagation delay (tPD) in an a-IGZO TFT-based circuit, and also proposed an extraction technique for the tPD-correlated mobility (μtPD) considering both the subgap density-of-states and the voltage-dependent charge density. It is verified that the proposed μtPD is the best correlated with the measured tPD in IGZO TFT-based inverters other than various mobilities in the literature. Our results have revealed that it is possible to predict tPD only with the measured current-voltage characteristic of the a-IGZO TFT without measuring tPD in IGZO-based circuits.
  • Keywords
    carrier mobility; gallium compounds; indium compounds; invertors; thin film transistors; zinc compounds; InGaZnO; a-IGZO TFT-based circuit; amorphous thin-film transistor-based inverter; current-voltage characteristic; extraction technique; field-effect mobility; propagation delay-correlated mobility extraction; voltage-dependent charge density; Current measurement; Inverters; Iron; Logic gates; Semiconductor device measurement; Thin film transistors; Voltage measurement; Amorphous indium-gallium-zinc oxide (a-IGZO); Amorphous indium???gallium???zinc oxide (a-IGZO); mobility; propagation delay; subgap density-of-states (DOSs); thin-film transistors (TFTs); thin-film transistors (TFTs).;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2015.2413941
  • Filename
    7067392