Static and dynamic properties of injection-locked semiconductor lasers

Author

Li, Linlin

Author_Institution

Inst. fur Hochfrequenztech., Tech. Univ. Berlin, Germany

Volume

30

Issue

8

fYear

1994

fDate

8/1/1994 12:00:00 AM

Firstpage

1701

Lastpage

1708

Abstract

The static and dynamic properties of injection-locked semiconductor lasers considering the influence of nonlinear gain are presented systematically. Depending on locking conditions, the modulation bandwidth of a semiconductor laser may be increased or decreased by external light injection. However, the relaxation resonance frequency and the damping rate as defined for a solitary Fabry-Perot (FP) laser are always enhanced by injection locking. That is, contrary to that in a solitary FP laser, the modulation bandwidth in an injection-locked laser is not determined solely by the relaxation resonance frequency, because an injection-locked laser is a third-order system. Therefore, a new definition of the modulation bandwidth is presented for such a laser. The performances of injection-locked distributed feedback (DFB) lasers are also discussed. The theory is in good agreement with the experiments

Keywords

distributed feedback lasers; optical modulation; semiconductor lasers; damping rate; dynamic properties; experiments; external light injection; injection-locked distributed feedback lasers; injection-locked semiconductor lasers; locking conditions; modulation bandwidth; nonlinear gain; performances; relaxation resonance frequency; solitary Fabry-Perot laser; static properties; theory; third-order system; Bandwidth; Damping; Distributed feedback devices; Fabry-Perot; Laser feedback; Laser theory; Optical modulation; Resonance; Resonant frequency; Semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.301632

Filename

301632