Title :
RF control of epitaxial lift-off PHEMT´s under backside illumination
Author :
Young, Paul G. ; Simons, Rainee N. ; Alterovitz, Samuel A. ; Romanofsky, Robert R. ; Smith, Edwyn D.
Author_Institution :
Dept. of Electr. Eng., Toledo Univ., OH, USA
fDate :
8/1/1994 12:00:00 AM
Abstract :
This paper presents the optical response of the DC and the RF (C-Band) performance of a 1 μm gate length epitaxial lift-off PHEMT device under backside illumination. The device when biased near pinch off exhibited an increase of S21, Gmax, and gm of 1.2 dB, 2 dB, and 56%, respectively. The measured responsivity was as high as 13.4 A/W with a quantum efficiency of 2300 percent. These results far exceeded previously reported performances for devices under frontside illumination
Keywords :
epitaxial growth; high electron mobility transistors; light emitting diodes; semiconductor device testing; semiconductor growth; 1 mum; DC performance; PHEMT; RF C-band performance; RF control; backside illumination; epitaxial lift-off; epitaxial lift-off PHEMT device; optical response; pinch off; quantum efficiency; responsivity; Gallium arsenide; HEMTs; Lighting; Optical attenuators; Optical devices; PHEMTs; Radio frequency; Signal detection; Stimulated emission; Substrates;
Journal_Title :
Quantum Electronics, IEEE Journal of
