A novel waveguided polarization mode splitter using refractive index changes induced by superlattice disordering

Author

Suzuki, Yasuhiro ; Iwamura, Hidetoshi ; Miyazawa, Takeo ; Mikami, Osamu

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

Volume

30

Issue

8

fYear

1994

fDate

8/1/1994 12:00:00 AM

Firstpage

1794

Lastpage

1800

Abstract

The operating principle of our polarization mode splitter is based on the polarization-dependent refractive index changes induced by disordering InGaAs/InP superlattices. We disordered superlattices by the Si₃N₄ cap-annealing method and measured the near-field patterns to confirm that the device functioned properly at a wavelength of 1.52 μm. The crosstalk was about -10 dB. We should be able to improve the characteristics of this device by optimizing its structure. This device requires no electrical control and will be very suitable for semiconductor monolithic integrated circuits

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical elements; refractive index; semiconductor superlattices; 1.52 mum; InGaAs-InP; InGaAs/InP superlattices; Si₃N₄; Si₃N₄ cap-annealing method; crosstalk; disordered superlattices; disordering; electrical control; near-field patterns; operating principle; polarization-dependent refractive index changes; refractive index changes; semiconductor monolithic integrated circuits; superlattice disordering; waveguided polarization mode splitter; Fabrication; Indium gallium arsenide; Indium phosphide; Laser modes; Optical waveguides; Polarization; Refractive index; Semiconductor lasers; Superlattices; Waveguide transitions;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.301644

Filename

301644