Title :
A novel waveguided polarization mode splitter using refractive index changes induced by superlattice disordering
Author :
Suzuki, Yasuhiro ; Iwamura, Hidetoshi ; Miyazawa, Takeo ; Mikami, Osamu
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
8/1/1994 12:00:00 AM
Abstract :
The operating principle of our polarization mode splitter is based on the polarization-dependent refractive index changes induced by disordering InGaAs/InP superlattices. We disordered superlattices by the Si3N4 cap-annealing method and measured the near-field patterns to confirm that the device functioned properly at a wavelength of 1.52 μm. The crosstalk was about -10 dB. We should be able to improve the characteristics of this device by optimizing its structure. This device requires no electrical control and will be very suitable for semiconductor monolithic integrated circuits
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical elements; refractive index; semiconductor superlattices; 1.52 mum; InGaAs-InP; InGaAs/InP superlattices; Si3N4; Si3N4 cap-annealing method; crosstalk; disordered superlattices; disordering; electrical control; near-field patterns; operating principle; polarization-dependent refractive index changes; refractive index changes; semiconductor monolithic integrated circuits; superlattice disordering; waveguided polarization mode splitter; Fabrication; Indium gallium arsenide; Indium phosphide; Laser modes; Optical waveguides; Polarization; Refractive index; Semiconductor lasers; Superlattices; Waveguide transitions;
Journal_Title :
Quantum Electronics, IEEE Journal of
