DocumentCode :
1129939
Title :
Optical losses and efficiency in GaAs laser diodes
Author :
Susaki, Wataru ; Oku, Taiji ; Sogo, T.
Author_Institution :
Mitsubishi Electric Corporation, Hyogo, Japan
Volume :
4
Issue :
4
fYear :
1968
fDate :
4/1/1968 12:00:00 AM
Firstpage :
122
Lastpage :
125
Abstract :
Optical gain and losses of GaAs laser diodes were deduced from the length dependence of the threshold current density and the differential external quantum efficiency at 77 and 300°K. It has been confirmed that the optical gain is proportional to the threshold current density Jt; and the optical losses are given by the sum of current independent term \\alpha _{0}\´ , and current dependent term \\beta , which is proportional to the threshold current density. The term \\beta depends on the laser wavelength because the threshold current density depends on the laser wavelength. It is believed that \\beta is caused by the penetration of the laser oscillations into the noninverted regions surrounding the inverted population region of the p-n junction.
Keywords :
Current density; Diode lasers; Electrons; Gain measurement; Gallium arsenide; Loss measurement; Optical losses; P-n junctions; Tellurium; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1968.1075039
Filename :
1075039
Link To Document :
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