DocumentCode :
1130067
Title :
Power semiconductor devices for variable-frequency drives
Author :
Baliga, B.Jayant
Author_Institution :
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
Volume :
82
Issue :
8
fYear :
1994
fDate :
8/1/1994 12:00:00 AM
Firstpage :
1112
Lastpage :
1122
Abstract :
Advances in power semiconductor technology are the driving force for enhancement of the performance of variable-frequency motor drives. The development of power semiconductor devices with MOS-gate structures has enabled the control of large amounts of energy with very little input power. An equally important advancement has taken place in the development of improved rectifiers with reduced losses for high-frequency operation. In addition, the advent of MOS-gated power switches has led to the creation of smart power technology which makes compact systems with built-in diagnostic and protection functions commercially feasible. Although the power semiconductor chips are all made from silicon today, recent analysis has indicated that devices fabricated from silicon carbide have the potential for completely displacing silicon devices in the long range
Keywords :
electric motors; power transistors; rectifiers; rectifying circuits; semiconductor switches; variable speed drives; HF operation; MOS-gate structures; Si; SiC; development; input power; losses; motor drives; performance; power semiconductor; power switches; rectifiers; smart power technology; variable frequency drives; Circuits; Insulated gate bipolar transistors; Motor drives; Power electronics; Power semiconductor devices; Silicon carbide; Silicon devices; Switches; Thyristors; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/5.301680
Filename :
301680
Link To Document :
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