• DocumentCode
    1130067
  • Title

    Power semiconductor devices for variable-frequency drives

  • Author

    Baliga, B.Jayant

  • Author_Institution
    Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
  • Volume
    82
  • Issue
    8
  • fYear
    1994
  • fDate
    8/1/1994 12:00:00 AM
  • Firstpage
    1112
  • Lastpage
    1122
  • Abstract
    Advances in power semiconductor technology are the driving force for enhancement of the performance of variable-frequency motor drives. The development of power semiconductor devices with MOS-gate structures has enabled the control of large amounts of energy with very little input power. An equally important advancement has taken place in the development of improved rectifiers with reduced losses for high-frequency operation. In addition, the advent of MOS-gated power switches has led to the creation of smart power technology which makes compact systems with built-in diagnostic and protection functions commercially feasible. Although the power semiconductor chips are all made from silicon today, recent analysis has indicated that devices fabricated from silicon carbide have the potential for completely displacing silicon devices in the long range
  • Keywords
    electric motors; power transistors; rectifiers; rectifying circuits; semiconductor switches; variable speed drives; HF operation; MOS-gate structures; Si; SiC; development; input power; losses; motor drives; performance; power semiconductor; power switches; rectifiers; smart power technology; variable frequency drives; Circuits; Insulated gate bipolar transistors; Motor drives; Power electronics; Power semiconductor devices; Silicon carbide; Silicon devices; Switches; Thyristors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/5.301680
  • Filename
    301680