DocumentCode
1130067
Title
Power semiconductor devices for variable-frequency drives
Author
Baliga, B.Jayant
Author_Institution
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
Volume
82
Issue
8
fYear
1994
fDate
8/1/1994 12:00:00 AM
Firstpage
1112
Lastpage
1122
Abstract
Advances in power semiconductor technology are the driving force for enhancement of the performance of variable-frequency motor drives. The development of power semiconductor devices with MOS-gate structures has enabled the control of large amounts of energy with very little input power. An equally important advancement has taken place in the development of improved rectifiers with reduced losses for high-frequency operation. In addition, the advent of MOS-gated power switches has led to the creation of smart power technology which makes compact systems with built-in diagnostic and protection functions commercially feasible. Although the power semiconductor chips are all made from silicon today, recent analysis has indicated that devices fabricated from silicon carbide have the potential for completely displacing silicon devices in the long range
Keywords
electric motors; power transistors; rectifiers; rectifying circuits; semiconductor switches; variable speed drives; HF operation; MOS-gate structures; Si; SiC; development; input power; losses; motor drives; performance; power semiconductor; power switches; rectifiers; smart power technology; variable frequency drives; Circuits; Insulated gate bipolar transistors; Motor drives; Power electronics; Power semiconductor devices; Silicon carbide; Silicon devices; Switches; Thyristors; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/5.301680
Filename
301680
Link To Document