Time-delay and memory effects in GaAs1-xPxinjection laser

The delay between turn-on of current and onset of lasing was measured in a GaAs0.60P0.40injection laser as a function of current. The delay can be as long as 700 ns but decreases with overdrive. The trap density is estimated at 10¹⁹cm^-3. A double-pulse experiment shows that the memory of the first pulse may persist for longer than a millisecond. A burst-of-pulses experiment indicates that the traps cannot be emptied optically by stimulated emission. A reverse bias was not able to empty the traps electrically.