DocumentCode :
1130104
Title :
Optimum stimulated light powers from GaAs injection lasers
Author :
Pilkuhn, M. ; Guettler, G.T.
Author_Institution :
University of Frankfurt, Frankfurt, Germany
Volume :
4
Issue :
4
fYear :
1968
fDate :
4/1/1968 12:00:00 AM
Firstpage :
132
Lastpage :
135
Abstract :
The total stimulated light power obtainable from GaAs injection lasers is optimized by varying reflection coefficient, laser length, and width. The laser performance is assumed to be limited by heating, and a given temperature rise is taken as a constant parameter of the optimization procedure. Two cases are considered: 1) operation with short pulses at low duty cycle, and 2) continuous operation. For both cases optimum reflection coefficients are obtained. Case 2) leads to optimum values for laser length and width, case 1) to favorable length values only.
Keywords :
Current density; Gallium arsenide; Heating; Laser transitions; Optical pulses; Optical reflection; Power lasers; Pump lasers; Temperature; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1968.1075057
Filename :
1075057
Link To Document :
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