• DocumentCode
    1130113
  • Title

    Recombination lifetime in a semiconductor laser diode

  • Author

    Nishizawa, Jun-ichi

  • Author_Institution
    Tohoku University, Sendai, Japan
  • Volume
    4
  • Issue
    4
  • fYear
    1968
  • fDate
    4/1/1968 12:00:00 AM
  • Firstpage
    143
  • Lastpage
    147
  • Abstract
    The effect of minority carrier lifetime on the impedance of the laser within a diffusion or a drift length from the junction is analyzed. Lifetime shorting due to stimulated recombination (which is a function of the injection current) is considered and the effect of cavity size on the ability to modulate the laser at high frequencies is pointed out.
  • Keywords
    Charge carrier lifetime; Diode lasers; Equations; Gallium arsenide; Impedance; Life estimation; Lifetime estimation; Optical materials; Radiative recombination; Semiconductor diodes;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1968.1075058
  • Filename
    1075058
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1130113