Electrical and radiation characteristics of semilarge photoconductive terahertz emitters

Author

Stone, Michael R. ; Naftaly, Mira ; Miles, Robert E. ; Fletcher, John R. ; Steenson, David Paul

Author_Institution

Sch. of Electron. & Electr. Eng., Univ. of Leeds, UK

Volume

52

Issue

10

fYear

2004

Firstpage

2420

Lastpage

2429

Abstract

We present experimental characterization of semilarge photoconductive emitters, including their electrical/photoconductive parameters and terahertz spectra. A range of emitters were studied and fabricated on both LT-GaAs and SI-GaAs, having a variety of electrode geometries. The spatial cone of terahertz radiation was defined. The dependencies of the photocurrent and the terahertz power on the bias voltage and the laser power were determined. A Fourier-transform interferometer is used to determine the terahertz spectra and to clarify the effects of the substrate and electrode geometry.

Keywords

III-V semiconductors; electrical contacts; electrodeposition; gallium arsenide; photoconductivity; photoemission; semiconductor growth; semiconductor thin films; submillimetre wave generation; Fourier-transform interferometer; GaAs; electrical characteristics; electrical-photoconductive parameters; electrode geometry; photocurrent; radiation characteristics; semilarge photoconductive terahertz emitters; terahertz power; terahertz radiation; terahertz spectra; Electrodes; Gallium arsenide; Geometrical optics; Laser mode locking; Optical pulses; Photoconductivity; Power lasers; Semiconductor lasers; Substrates; Voltage; Interferometer; LT; grown GaAs; low-temperature; photoconductive emitter; terahertz;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2004.835980

Filename

1341662