DocumentCode :
1130197
Title :
Notching Effect on Metal Etch: A Very Simple Predictive Model
Author :
Garozzo, Giuseppe ; Beffumo, Fabio ; La Magna, Antonino
Author_Institution :
Central Res. & Dev., STMicroelectronics, Catania, Italy
Volume :
18
Issue :
3
fYear :
2005
Firstpage :
355
Lastpage :
358
Abstract :
In this paper, a very simple model of notching effect is reported. From an engineering point of view, the notching effect is an undercut between bottom of metal strip and stop layer (generally oxide) which can be observed in a  Cl_2 BCl_3 metal etch when the geometry is shrunk. Starting from (Horwitz, 1993), a very detailed relation between geometrical decreasing , ion beam isotropy increasing, and sheath voltage was proposed. Then, a set of experiments performed on patterned aluminum wafers etched in a transformed coupled plasma (TCP) reactor were carried out in order to support the model based on sheath field curvature around metal lines. The experimental results are in good agreement with the theoretical predictions. This confirms the reliability of model proposed in order to manage the engineering problems which take place when a scaling down is performed.
Keywords :
boron compounds; etching; lithography; notch strength; resists; Cl2-BCl3; metal etch; notching effect; predictive model; sheath field curvature; sheath voltage; transformed coupled plasma reactor; Aluminum; Etching; Geometry; Ion beams; Plasma applications; Plasma sheaths; Predictive models; Semiconductor device modeling; Strips; Voltage; Metal etch; notching effect; resist consumption; sheath voltage;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/TSM.2005.852096
Filename :
1492450
Link To Document :
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