• DocumentCode
    1130197
  • Title

    Notching Effect on Metal Etch: A Very Simple Predictive Model

  • Author

    Garozzo, Giuseppe ; Beffumo, Fabio ; La Magna, Antonino

  • Author_Institution
    Central Res. & Dev., STMicroelectronics, Catania, Italy
  • Volume
    18
  • Issue
    3
  • fYear
    2005
  • Firstpage
    355
  • Lastpage
    358
  • Abstract
    In this paper, a very simple model of notching effect is reported. From an engineering point of view, the notching effect is an undercut between bottom of metal strip and stop layer (generally oxide) which can be observed in a  Cl_2 BCl_3 metal etch when the geometry is shrunk. Starting from (Horwitz, 1993), a very detailed relation between geometrical decreasing , ion beam isotropy increasing, and sheath voltage was proposed. Then, a set of experiments performed on patterned aluminum wafers etched in a transformed coupled plasma (TCP) reactor were carried out in order to support the model based on sheath field curvature around metal lines. The experimental results are in good agreement with the theoretical predictions. This confirms the reliability of model proposed in order to manage the engineering problems which take place when a scaling down is performed.
  • Keywords
    boron compounds; etching; lithography; notch strength; resists; Cl2-BCl3; metal etch; notching effect; predictive model; sheath field curvature; sheath voltage; transformed coupled plasma reactor; Aluminum; Etching; Geometry; Ion beams; Plasma applications; Plasma sheaths; Predictive models; Semiconductor device modeling; Strips; Voltage; Metal etch; notching effect; resist consumption; sheath voltage;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/TSM.2005.852096
  • Filename
    1492450