DocumentCode :
1130220
Title :
On the influence of crystal orientation on solution-grown GaAs laser diodes
Author :
Beneking, H. ; Vits, W. ; Beneking, H. ; Vits, W.
Author_Institution :
Institut für Halbleitertechnik, Technische Hochschule Aachen, Germany
Volume :
4
Issue :
4
fYear :
1968
fDate :
4/1/1968 12:00:00 AM
Firstpage :
201
Lastpage :
204
Abstract :
Solution-grown GaAs 
junctions were formed simultaneously using three differently oriented wafers, namely, the
junctions were formed simultaneously using three differently oriented wafers, namely, theKeywords :
Atomic beams; Crystalline materials; Diode lasers; Epitaxial growth; Gallium arsenide; P-n junctions; Pulse measurements; Substrates; Temperature; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1968.1075071
Filename :
1075071
Link To Document :
