• DocumentCode
    1130282
  • Title

    On the Relationship of Semiconductor Yield and Reliability

  • Author

    Kim, Kyungmee O. ; Zuo, Ming J. ; Kuo, Way

  • Author_Institution
    Dept. of Ind. Eng., Konkuk Univ., Seoul, South Korea
  • Volume
    18
  • Issue
    3
  • fYear
    2005
  • Firstpage
    422
  • Lastpage
    429
  • Abstract
    Traditionally, semiconductor reliability has been estimated from the life tests or accelerated stress tests at the completion of manufacturing processes. Recent research, however, has been directed to reliability estimation during the early production stage through a relation model of yield and reliability. Because the relation model depends on the assumed density distribution of manufacturing defects, we investigate the effect of the defect density distributions on the predicted reliability, for a single-area device without repair and for a two-area device with repair, respectively. We show that for any device, reliability functions preserve an ordering of yield functions. It is also pointed out that the repair capability improves only yield but not reliability, resulting in a large value of the factor that scales from yield to reliability. In order to achieve a reliable device, therefore, we suggest to improve yield and to perform the device test such as burn-in if the scaling factor is large.
  • Keywords
    failure analysis; integrated circuit reliability; integrated circuit yield; life testing; accelerated stress tests; density distribution; life tests; manufacturing processes; reliability estimation; semiconductor yield; Life estimation; Life testing; Manufacturing processes; Predictive models; Production; Semiconductor device reliability; Semiconductor device testing; Stress; Virtual manufacturing; Yield estimation; Conditional reliability; defect density distribution; nonfatal defects; scaling factor;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/TSM.2005.852110
  • Filename
    1492458