• DocumentCode
    1130597
  • Title

    Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer

  • Author

    Castiglia, A. ; Feltin, E. ; Dorsaz, J. ; Cosendey, G. ; Carlin, J.-F. ; Butte, R. ; Grandjean, N.

  • Author_Institution
    Inst. of Quantum Electron. & Photonics, Lausanne
  • Volume
    44
  • Issue
    8
  • fYear
    2008
  • Firstpage
    521
  • Lastpage
    522
  • Abstract
    A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0.83In0.17N cladding layer lattice- matched to GaN. Lasing action is demonstrated for gain-guided devices at room temperature under pulsed current injection conditions. Direct comparison with structures including only a standard Al0.07Ga0.93N bottom cladding shows an improved optical confinement. This is exemplified by a decreased threshold current density.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; quantum well lasers; vapour phase epitaxial growth; InGaN-GaN; blue laser diodes; lattice-matched bottom cladding layer; metal organic vapour phase epitaxy; multiple quantum well laser diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20080495
  • Filename
    4489877
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1130597