Title :
Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer
Author :
Castiglia, A. ; Feltin, E. ; Dorsaz, J. ; Cosendey, G. ; Carlin, J.-F. ; Butte, R. ; Grandjean, N.
Author_Institution :
Inst. of Quantum Electron. & Photonics, Lausanne
Abstract :
A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0.83In0.17N cladding layer lattice- matched to GaN. Lasing action is demonstrated for gain-guided devices at room temperature under pulsed current injection conditions. Direct comparison with structures including only a standard Al0.07Ga0.93N bottom cladding shows an improved optical confinement. This is exemplified by a decreased threshold current density.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; quantum well lasers; vapour phase epitaxial growth; InGaN-GaN; blue laser diodes; lattice-matched bottom cladding layer; metal organic vapour phase epitaxy; multiple quantum well laser diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20080495
