• DocumentCode
    1130622
  • Title

    High-power long-wavelength room-temperature MOVPE-grown quantum cascade lasers with air-semiconductor waveguide

  • Author

    Wang, Q.J. ; Pflügl, C. ; Diehl, L. ; Capasso, F. ; Furuta, S. ; Kan, H.

  • Author_Institution
    Harvard Univ., Cambridge
  • Volume
    44
  • Issue
    8
  • fYear
    2008
  • Firstpage
    525
  • Lastpage
    526
  • Abstract
    Quantum cascade lasers grown by metal organic vapour phase epitaxy (MOVPE) with high peak output power of 1.3 W at 300 K emitting a wavelength of 9.8 mum are reported. The devices are processed in wide ridge waveguide structures with an air-semiconductor interface to confine the laser optical mode. This design increases the optical overlap factor and reduces waveguide losses.
  • Keywords
    quantum cascade lasers; ridge waveguides; vapour phase epitaxial growth; air-semiconductor waveguide; laser optical mode; metal organic vapour phase epitaxy; optical overlap; power 1.3 W; quantum cascade lasers; temperature 300 K; waveguide losses reduction; wavelength 9.8 micron; wide ridge waveguide structures;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20080543
  • Filename
    4489880