DocumentCode
1130622
Title
High-power long-wavelength room-temperature MOVPE-grown quantum cascade lasers with air-semiconductor waveguide
Author
Wang, Q.J. ; Pflügl, C. ; Diehl, L. ; Capasso, F. ; Furuta, S. ; Kan, H.
Author_Institution
Harvard Univ., Cambridge
Volume
44
Issue
8
fYear
2008
Firstpage
525
Lastpage
526
Abstract
Quantum cascade lasers grown by metal organic vapour phase epitaxy (MOVPE) with high peak output power of 1.3 W at 300 K emitting a wavelength of 9.8 mum are reported. The devices are processed in wide ridge waveguide structures with an air-semiconductor interface to confine the laser optical mode. This design increases the optical overlap factor and reduces waveguide losses.
Keywords
quantum cascade lasers; ridge waveguides; vapour phase epitaxial growth; air-semiconductor waveguide; laser optical mode; metal organic vapour phase epitaxy; optical overlap; power 1.3 W; quantum cascade lasers; temperature 300 K; waveguide losses reduction; wavelength 9.8 micron; wide ridge waveguide structures;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20080543
Filename
4489880
Link To Document