• DocumentCode
    1130650
  • Title

    2.5 dB NF 3.1-10.6 GHz CMOS UWB LNA with small group-delay variation

  • Author

    Yang, H.-Y. ; Lin, Y.-S. ; Chen, C.-C.

  • Author_Institution
    Nat. Chi Nan Univ., Puli
  • Volume
    44
  • Issue
    8
  • fYear
    2008
  • Firstpage
    528
  • Lastpage
    529
  • Abstract
    A 3.1-10.6 GHz ultra-wideband low-noise amplifier (UWB LNA) with excellent phase linearity property (group-delay variation is only plusmn 16.7 ps across the whole band) using standard 0.13 mum CMOS technology is reported. To achieve high and flat gain and small group-delay variation at the same time, the inductive peaking technique is adopted in the output stage for bandwidth enhancement. The UWB LNA achieved input return loss (S11) of -17.5 to -33.6 dB, output return loss (S22) of -14.4 to -16.3 dB, flat forward gain (S22) of 7.92 plusmn 0.23 dB, and reverse isolation (S12) of -25.8 to -41.9 dB over the 3.1-10.6 GHz band of interest. A state-of-the-art noise figure (NF) of 2.5 dB was achieved at 10.5 GHz.
  • Keywords
    CMOS integrated circuits; low noise amplifiers; CMOS technology; NF; UWB LNA; bandwidth enhancement; group-delay variation; inductive peaking technique; state-of-the-art noise figure; ultra-wideband low-noise amplifier;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20083425
  • Filename
    4489882