Title :
Wavelength dependent characteristics of high-speed metamorphic photodiodes
Author :
Jang, J.H. ; Cueva, G. ; Sankaralingam, R. ; Fay, P. ; Hoke, W.E. ; Adesida, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
Double-heterojunction photodiodes based on GaAs metamorphic growth technology are described. The effect of the large bandgap InAlAs layer incorporated in the device heterostructure was examined by measuring wavelength dependent responsivities and bandwidths at 0.85-, 1.33-, and 1.55-μm illumination. The photodiodes exhibited 0.4 A/W responsivity and over 50-GHz bandwidth for 1.55-μm laser illumination. The bias voltage required to achieve the maximum bandwidth was measured to be less than -1 V.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; leakage currents; photodiodes; 0.85 micron; 1.33 micron; 1.55 micron; 50 GHz; A/W responsivity; GaAs; GaAs metamorphic growth technology; InAlAs-InGaAs-GaAs; bias voltage; double-heterojunction photodiodes; high-speed metamorphic photodiodes; large bandgap InAlAs layer; low-leakage current; wavelength dependent characteristics; wavelength dependent responsivities; Anodes; Bandwidth; Contact resistance; Gallium arsenide; Lighting; Optoelectronic devices; Photodiodes; Photonic band gap; Radio frequency; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2002.806886
