DocumentCode
1131198
Title
Current-injection induced dislocation networks in II-VI laser diodes: bottom-up structures emerging in top-down system
Author
Ishibashi, A. ; Kondo, K.
Author_Institution
Lab. of Quantum Electron., Hokkaido Univ., Japan
Volume
40
Issue
20
fYear
2004
Firstpage
1268
Lastpage
1269
Abstract
By controlling the location of staking faults and adjusting the amount of electron-hole injection in pn-junction, structural connection between a bottom-up structure of dislocations and a top-down structure of diodes can be made in a controlled manner. The possibility of uniting bottom-up structures with top-down system is demonstrated.
Keywords
II-VI semiconductors; dislocation structure; electron-hole recombination; p-n junctions; semiconductor lasers; stacking faults; II-VI laser diodes; bottom up structures; current injection induced dislocation networks; electron-hole injection; p-n junction; staking faults; top-down system;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20046226
Filename
1342146
Link To Document