• DocumentCode
    1131198
  • Title

    Current-injection induced dislocation networks in II-VI laser diodes: bottom-up structures emerging in top-down system

  • Author

    Ishibashi, A. ; Kondo, K.

  • Author_Institution
    Lab. of Quantum Electron., Hokkaido Univ., Japan
  • Volume
    40
  • Issue
    20
  • fYear
    2004
  • Firstpage
    1268
  • Lastpage
    1269
  • Abstract
    By controlling the location of staking faults and adjusting the amount of electron-hole injection in pn-junction, structural connection between a bottom-up structure of dislocations and a top-down structure of diodes can be made in a controlled manner. The possibility of uniting bottom-up structures with top-down system is demonstrated.
  • Keywords
    II-VI semiconductors; dislocation structure; electron-hole recombination; p-n junctions; semiconductor lasers; stacking faults; II-VI laser diodes; bottom up structures; current injection induced dislocation networks; electron-hole injection; p-n junction; staking faults; top-down system;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20046226
  • Filename
    1342146