DocumentCode :
1131352
Title :
Low-Resistance Carbon Nanotube Contact Plug to Silicon
Author :
Chai, Yang ; Xiao, Zhiyong ; Chan, Philip C.H.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Volume :
30
Issue :
8
fYear :
2009
Firstpage :
811
Lastpage :
813
Abstract :
We demonstrated the integration of carbon nanotubes (CNTs) as the contact plug to the Si MOSFET. A Ti silicide contact layer was introduced between the CNTs and the Si. The open-ended CNT tip connected the metal one on the other end. We study the contact resistivity of the CNT contact plug using the cross-bridge Kelvin test structure, and compare with the W contact plug. The CNT contact plug also showed excellent thermal stability. The electrical and thermal behavior is closely related to the intermediate layer between the CNT and the Si.
Keywords :
MOSFET; carbon nanotubes; thermal stability; Si MOSFET; Ti silicide contact layer; carbon nanotube; contact plug; cross-bridge Kelvin test structure; thermal stability; Carbon nanotube (CNT); contacts; interconnection; plug;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2024778
Filename :
5161335
Link To Document :
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