Title :
Non-magnetic 30 dB integrated optical isolator in III/V material
Author :
Ibrahim, S.K. ; Bhandare, S. ; Sandel, D. ; Zhang, H. ; Noé, R.
Author_Institution :
Univ. of Paderborn, Germany
Abstract :
Travelling electrical waves make the transmission direction-dependent in a single-sideband electro-optic modulator. Isolation is 30 dB; excess insertion loss is 8 dB. Residual r.m.s. ripple is 7% for RF driving amplitudes of 3.5 Vpp at 4.0 GHz. Transmission penalty for 40 Gbit/s RZ-DPSK signals is 0.2 dB estimated, 0 dB measured.
Keywords :
III-V semiconductors; aluminium compounds; differential phase shift keying; electro-optical modulation; gallium arsenide; signal processing; 0.2 dB; 30 dB; 4 GHz; 40 Gbit/s; DPSK signals; GaAs-AlGaAs; RF driving amplitudes; insertion loss; nonmagnetic integrated optical isolator; single-sideband electro-optic modulator; transmission direction-dependence; travelling electrical waves;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20045901
