Approximate dependence of the spontaneous emission rate on electron and hole concentrations

Author

Grinberg, A.A.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

Volume

30

Issue

5

fYear

1994

fDate

5/1/1994 12:00:00 AM

Firstpage

1151

Lastpage

1155

Abstract

The total spontaneous emission rate (R_sp) is an important quantity, which is widely used in the particle rate equation of light-emitting diodes and semiconductor lasers. It is important to find the explicit dependence of R_sp on electron and hole concentrations. Such an approximate analytical expression is proposed both for two- and three-dimensional systems. Accuracy of the approximation is within 15% for undoped and 25% for doped semiconductors. Dependence of the relative error on the electron-hole concentrations and a quantitative comparison of the approximate, and exact expressions are illustrated

Keywords

carrier density; laser theory; light emitting diodes; semiconductor lasers; approximate analytical expression; approximate dependence; doped semiconductors; electron concentrations; hole concentrations; light-emitting diodes; particle rate equation; relative error; semiconductor lasers; spontaneous emission rate; Charge carrier processes; Distribution functions; Electron emission; Equations; Laser transitions; Light emitting diodes; Semiconductor device doping; Semiconductor lasers; Spontaneous emission; Stimulated emission;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.303672

Filename

303672