DocumentCode :
1131470
Title :
Electrical isolation of InP and InGaAs using iron and krypton
Author :
Too, P. ; Ahmed, S. ; Gwilliam, R. ; Sealy, B.J.
Author_Institution :
Sch. of Electron. & Sci., Univ. of Surrey, Guildford, UK
Volume :
40
Issue :
20
fYear :
2004
Firstpage :
1302
Lastpage :
1304
Abstract :
Both n-type InP and InGaAs layers are electrically isolated using iron and krypton ion implantation at 77K to create thermally-stable highly resistive regions. The data suggests that, in both InP and InGaAs, chemical induced compensation operates above a post-implant annealing temperature of 500°C for iron implant isolation. However, in the case of krypton, damage induced isolation is the only compensation mechanism responsible for electrical isolation in both materials. The isolation scheme used looks promising to III-V semiconductor industries since such high sheet resistance values (∼107 Ω/sq) with a broad thermally-stable window are obtained for both n-type InP and InGaAs materials.
Keywords :
III-V semiconductors; annealing; carrier density; electric resistance; gallium arsenide; indium compounds; ion implantation; iron; krypton; semiconductor thin films; thermal stability; 77 K; III-V semiconductor industries; InGaAs layers; InP layers; InP:Fe; InP:Kr; damage induced isolation; electrical isolation; implant annealing temperature; iron ion implantation; krypton ion implantation; resistive regions; sheet resistance; thermally stable;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20045922
Filename :
1342170
Link To Document :
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