Title :
Nonlinear absorption in a GaAs waveguide just above half the band gap
Author :
Villeneuve, A. ; Yang, C.C. ; Stegeman, G.I. ; Ironside, C.N. ; Scelsi, G. ; Osgood, R.M.
Author_Institution :
CREOL, Central Florida Univ., Orlando, FL, USA
fDate :
5/1/1994 12:00:00 AM
Abstract :
Nonlinear absorption in a GaAs waveguide is measured with photon energies near half the band-gap energy by employing single-beam and pump-probe attenuation techniques. Two-photon absorption followed by free-carrier absorption are the dominant nonlinear absorption mechanisms that are included in a model that fits the experimental data
Keywords :
III-V semiconductors; energy gap; gallium arsenide; integrated optics; light absorption; nonlinear optics; optical pumping; optical waveguides; GaAs; GaAs waveguide; band gap; band-gap energy; dominant nonlinear absorption mechanisms; free-carrier absorption; nonlinear absorption; photon energies; pump-probe attenuation techniques; single-beam; two-photon absorption; Absorption; Attenuation; Gallium arsenide; Laser excitation; Photonic band gap; Probes; Refractive index; Semiconductor waveguides; Solid lasers; Waveguide discontinuities;
Journal_Title :
Quantum Electronics, IEEE Journal of
