• DocumentCode
    1131480
  • Title

    InP/GaAsSb type-II DHBTs with fT>350 GHz

  • Author

    Chu-Kung, B.F. ; Feng, M.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana-Champaign, IL, USA
  • Volume
    40
  • Issue
    20
  • fYear
    2004
  • Firstpage
    1305
  • Lastpage
    1306
  • Abstract
    Type-II InP/GaAsSb double heterojunction bipolar transistors (DHBTs) were fabricated and achieved a state-of-the-art peak fT of 358 GHz. The device consists of a 0.35×8 μm emitter with a 25 nm GaAsSb strained base and a 75 nm InP collector. The transistor exhibits a BVCEO>4 V and a maximum DC current gain (β) of 19. The peak RF operating collector current density exceeds 900 kA/cm2.
  • Keywords
    III-V semiconductors; MOCVD; current density; electron beam lithography; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor epitaxial layers; 25 nm; 358 GHz; 75 nm; DC current gain; InP collector; InP-GaAsSb; MOCVD; RF operating collector current density; double heterojunction bipolar transistors; electron beam lithography; semiconductor epitaxial layers; type-II DHBTs;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20046286
  • Filename
    1342173
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1131480