Title :
InP/GaAsSb type-II DHBTs with fT>350 GHz
Author :
Chu-Kung, B.F. ; Feng, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana-Champaign, IL, USA
Abstract :
Type-II InP/GaAsSb double heterojunction bipolar transistors (DHBTs) were fabricated and achieved a state-of-the-art peak fT of 358 GHz. The device consists of a 0.35×8 μm emitter with a 25 nm GaAsSb strained base and a 75 nm InP collector. The transistor exhibits a BVCEO>4 V and a maximum DC current gain (β) of 19. The peak RF operating collector current density exceeds 900 kA/cm2.
Keywords :
III-V semiconductors; MOCVD; current density; electron beam lithography; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor epitaxial layers; 25 nm; 358 GHz; 75 nm; DC current gain; InP collector; InP-GaAsSb; MOCVD; RF operating collector current density; double heterojunction bipolar transistors; electron beam lithography; semiconductor epitaxial layers; type-II DHBTs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20046286
