• DocumentCode
    1131488
  • Title

    Solution of Schrödinger equation in double-gate MOSFETs using transfer matrix method

  • Author

    Abdolkader, T.M. ; Hassan, H.H. ; Fikry, W. ; Omar, O.A.

  • Author_Institution
    Dept. of Basic Sci., Benha Higher Inst. of Technol., Egypt
  • Volume
    40
  • Issue
    20
  • fYear
    2004
  • Firstpage
    1307
  • Lastpage
    1308
  • Abstract
    The transfer matrix method (TMM) has been extensively used to investigate quantum-mechanical tunnelling through potential barriers. Reported is the application of TMM, for the first time, to solve the Schrödinger equation in double-gate MOSFETs. The method is shown to be more accurate than the conventional finite difference method, especially for high energy levels.
  • Keywords
    MOSFET; Schrodinger equation; finite difference methods; matrix algebra; semiconductor device models; tunnelling; Schrodinger equation; conventional finite difference method; double gate MOSFET; quantum-mechanical tunnelling; transfer matrix method;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20045595
  • Filename
    1342174
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1131488