Title :
Solution of Schrödinger equation in double-gate MOSFETs using transfer matrix method
Author :
Abdolkader, T.M. ; Hassan, H.H. ; Fikry, W. ; Omar, O.A.
Author_Institution :
Dept. of Basic Sci., Benha Higher Inst. of Technol., Egypt
Abstract :
The transfer matrix method (TMM) has been extensively used to investigate quantum-mechanical tunnelling through potential barriers. Reported is the application of TMM, for the first time, to solve the Schrödinger equation in double-gate MOSFETs. The method is shown to be more accurate than the conventional finite difference method, especially for high energy levels.
Keywords :
MOSFET; Schrodinger equation; finite difference methods; matrix algebra; semiconductor device models; tunnelling; Schrodinger equation; conventional finite difference method; double gate MOSFET; quantum-mechanical tunnelling; transfer matrix method;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20045595
