Optimization of bistable planar resonators operated near half the band gap

Author

Peschel, U. ; Peschel, Thomas ; Lederer, F.

Author_Institution

Fac. of Phys. & Astron., Friedrich-Schiller-Univ., Jena, Germany

Volume

30

Issue

5

fYear

1994

fDate

5/1/1994 12:00:00 AM

Firstpage

1241

Lastpage

1249

Abstract

By using a modal approach that describes the optical response of a large class of nonlinear planar resonators under pulsed beam excitation we derive conditions to optimize the device with respect to different criteria. The influence of the nonlinearity is taken into account for both the cavity and the reflectors. The procedure results in simple algebraic formulas for the cavity thickness and the number of unit cells building the reflectors. The results hold likewise for microresonators of finite size and provide experimentalists with a useful tool to fabricate appropriate resonators for all optical switching operations

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; optical Kerr effect; optical bistability; optical resonators; optical switches; optimisation; semiconductor switches; GaAlAs; GaAlAs planar semiconductor resonators; algebraic formulas; all optical switching operations; band gap; bistable planar resonators; cavity thickness; finite size; microresonators; modal approach; nonlinear planar resonators; optical response; optimization; pulsed beam excitation; reflectors; unit cells; Microcavities; Molecular beam epitaxial growth; Nonlinear optics; Optical arrays; Optical bistability; Optical devices; Optical resonators; Optical saturation; Photonic band gap; Surface emitting lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.303687

Filename

303687