DocumentCode
1131648
Title
Finite-element modeling of silica waveguide amplifiers with high erbium concentration
Author
Di Pasquale, Fabrizio ; Zoboli, Maurizio ; Federigh, Marco ; Massarek, Ilana
Author_Institution
Dipartimento di Ingegneria dell´´Inf., Parma Univ., Italy
Volume
30
Issue
5
fYear
1994
fDate
5/1/1994 12:00:00 AM
Firstpage
1277
Lastpage
1282
Abstract
We report numerical analysis of planar and channel silica waveguide amplifiers with high erbium concentration. The numerical approach is based on the combined use of a full-vectorial finite-element method and the Runge-Kutta algorithm. It allows one to investigate real structures, accounting for both the active ions interactions by cross-relaxation and upconversion and the effects of waveguide geometry and refractive index profile. We show that, depending on input pump power and waveguide structure, ion-ion interactions affect the amplifier performance for high erbium concentrations. A three-dimensional waveguide designed for single-mode operation ensures higher pumping efficiency and lower noise characteristics than a two-dimensional one and seems to be the best candidate to overcome this drawback
Keywords
Runge-Kutta methods; erbium; finite element analysis; optical waveguide theory; optical waveguides; solid lasers; Runge-Kutta algorithm; SiO2:Er; active ion-ion interactions; channel waveguide; cross-relaxation; erbium concentration; full-vectorial finite-element model; noise characteristics; numerical analysis; planar waveguide; pumping efficiency; refractive index profile; silica waveguide amplifiers; single-mode operation; three-dimensional waveguide; upconversion; Electromagnetic waveguides; Erbium; Erbium-doped fiber amplifier; Finite element methods; Geometry; Optical amplifiers; Optical waveguides; Planar waveguides; Refractive index; Silicon compounds;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.303693
Filename
303693
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