DocumentCode :
1131747
Title :
A Fluxless and Low-Temperature Flip Chip Process Based on Insertion Technique
Author :
Fendler, Manuel ; Davoine, Cécile ; Marion, François ; Saint-Patrice, Damien ; Fortunier, Roland ; Ribot, Hervé
Author_Institution :
CEA-LETI/ MINATEC, Grenoble
Volume :
32
Issue :
1
fYear :
2009
fDate :
3/1/2009 12:00:00 AM
Firstpage :
207
Lastpage :
215
Abstract :
For heterogeneous materials assembly, the thermal expansion mismatch between the chip and the substrate is a roadblock for flip chip bonding of ultrafine-pitch ( les 10 mum) and large diagonal devices ( ges 20 mm). Residual strains in bumps and device warpage have been calculated to evaluate the thermomechanical limits of a conventional flip chip soldering process using micro bumping. As a solution to overcome these limits, this paper describes a new patented flip-chip technology representing a technological breakthrough compared to conventional methods such as soldering or bonding through conductive adhesives. Electrical connections are performed by the insertion of metallic micro-tips in a ductile material. As a low-temperature process and fluxless technology, this method is adapted to fine-pitch and large devices. As a proof of concept, we present the bonding results obtained on fine-pitch large arrays of daisy chains with 500 times 500 contacts and 30 -mum pitch. The electrical contact has been demonstrated and characterized in terms of resistance and yield.
Keywords :
ductility; flip-chip devices; soldering; thermal expansion; thermal management (packaging); ductile material; flip chip soldering process; fluxless flip chip process; heterogeneous materials assembly; insertion technique; low-temperature flip chip process; micro bumping; residual strains; thermal expansion mismatch; thermomechanical limits; ultrafine-pitch; Fine pitch; flip chip; fluxless; insertion; interconnection; large infrared detector array; thermomechanical modeling;
fLanguage :
English
Journal_Title :
Components and Packaging Technologies, IEEE Transactions on
Publisher :
ieee
ISSN :
1521-3331
Type :
jour
DOI :
10.1109/TCAPT.2008.2005099
Filename :
4768667
Link To Document :
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