Title :
Analysis of the switching speed of BiCMOS buffer under high current
Author :
Zhang, Shayan ; Kalkur, T.S. ; Lee, Steven ; Chen, Dengyuan
Author_Institution :
Dept. of Electr. & Comput. Eng., Colorado Univ., Colorado Springs, CO, USA
fDate :
7/1/1994 12:00:00 AM
Abstract :
A nonlinear analytical transient response model that is suitable for BiCMOS driver circuits operating under the Kirk and Van der Ziel effect is presented. The model accounts for both base vertical push-out and lateral stretching phenomena where the forward transit time τ f has a square law dependence on the collector current. Based on the new transient model, a closed-form BiCMOS delay expression is derived that shows excellent agreement with measured gate delay from a 0.8-μm BiCMOS technology. The comparison is made for a wide range of circuit parameters. The delay model can be used to develop timing analyzers, timing simulators, and circuit optimization tools for ULSI circuit design. As an application of the delay model, a circuit design algorithm is derived to optimize the speed-area performance of the BiCMOS buffers
Keywords :
BiCMOS integrated circuits; buffer circuits; circuit CAD; circuit analysis computing; delays; digital integrated circuits; driver circuits; equivalent circuits; switching; transient response; 0.8 micron; BiCMOS buffer; BiCMOS driver circuits; Kirk effect; ULSI circuit design; Van der Ziel effect; circuit design algorithm; closed-form BiCMOS delay expression; collector current; delay model; forward transit time; gate delay; lateral stretching phenomena; nonlinear analytical model; speed-area performance optimisation; square law dependence; switching speed; transient response model; vertical push-out phenomena; Analytical models; BiCMOS integrated circuits; Circuit simulation; Circuit synthesis; Delay; Driver circuits; Kirk field collapse effect; Timing; Transient analysis; Transient response;
Journal_Title :
Solid-State Circuits, IEEE Journal of
