Title :
High-speed low-power direct-coupled complementary push-pull ECL circuit
Author :
Chuang, C.T. ; Chin, K.
Author_Institution :
T.J. Watson Res. Centre, IBM Res. Div., Yorktown Heights, NY, USA
fDate :
7/1/1994 12:00:00 AM
Abstract :
This paper presents a high-speed low-power direct-coupled complementary push-pull ECL (DC-PP-ECL) circuit. The circuit features a direct-coupled pnp pull-up and npn pull-down scheme with no extra biasing circuit for the push- and pull-transistor. The bias of the pull-up pnp transistor is established entirely by direct tapping of the existing voltage levels in the current switch. The scheme provides a sharp self-terminating dynamic current pulse through the pull-up pnp transistor during the switching transient, thus completely decoupling the collector load resistor from the delay path. Based on a 0.8-μm double-poly self-aligned complementary bipolar process, the circuit offers 2.0X (2.2X) improvement in the loaded delay at 1.0 (0.5) mW/gate and 2.2X improvement in the load driving capability at 1.0 mW/gate compared with the conventional ECL circuit
Keywords :
VLSI; bipolar integrated circuits; emitter-coupled logic; integrated logic circuits; 0.8 micron; VLSI; collector load resistor; direct tapping; direct-coupled complementary push-pull ECL circuit; direct-coupled npn pull-down scheme; direct-coupled pnp pull-up scheme; double-poly self-aligned complementary bipolar process; load driving capability; loaded delay; self-terminating dynamic current pulse; switching transient; voltage levels; Coupling circuits; Delay; Diodes; Helium; Power dissipation; Resistors; Switches; Switching circuits; Very large scale integration; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of