Characterization and improvement of GaAs HEMT analog switches for sampled-data applications

Author

Feng, Shen ; Seitzer, Dieter

Author_Institution

Fraunhofer Inst. fur Integrated Circuits, Erlagen, Germany

Volume

29

Issue

7

fYear

1994

fDate

7/1/1994 12:00:00 AM

Firstpage

844

Lastpage

850

Abstract

This paper presents design consideration and experimental comparison of GaAs HEMT analog switches for high-speed and high-precision sampled-data applications. At first, basic pass-transistor switches fabricated in a 0.5-μm GaAs HEMT technology are measured for characterization of transient errors induced due to clock-feedthrough and charge transfer. In order to improve the switch dynamic performances, a dual dummy transistor compensation technique is used and related driver circuitry is developed. On-wafer measurements demonstrate that the improved switch provides a significant reduction of the transient errors, a reasonable dynamic range, and a high isolation. The switch with a 0.53 pF load capacitor achieves a total harmonic distortion below -55 dB and -38 dB at 10 MHz and 1.0 GHz clock frequency, respectively

Keywords

III-V semiconductors; analogue processing circuits; driver circuits; error compensation; field effect integrated circuits; gallium arsenide; high electron mobility transistors; linear integrated circuits; semiconductor switches; switching circuits; transient response; 0.5 micron; 0.53 pF; 10 MHz to 1 GHz; GaAs; GaAs HEMT analog switches; charge transfer; clock-feedthrough; driver circuitry; dual dummy transistor compensation technique; sampled-data applications; transient errors; Charge measurement; Charge transfer; Clocks; Current measurement; Distortion measurement; Driver circuits; Gallium arsenide; HEMTs; Switches; Switching circuits;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.303725

Filename

303725