Title :
Systematic Transistor and Inductor Modeling for Millimeter-Wave Design
Author :
Liang, ChuanKang ; Razavi, Behzad
Author_Institution :
Electr. Eng. Dept., Univ. of California, Los Angeles, CA
Abstract :
This paper proposes a simulation-based modeling methodology that provides greater flexibility in the design and layout of millimeter-wave CMOS circuits than measurement- based models do. A physical model for the metallization capacitances of the transistors is described and new layout techniques are introduced that exploit these capacitances to improve the circuit performance. The accuracy of the models is verified by the design and measurement of five oscillators operating in the range of 40 GHz to 130 GHz in 90-nm CMOS technology.
Keywords :
CMOS integrated circuits; millimetre wave transistors; oscillators; semiconductor device metallisation; frequency 40 GHz to 130 GHz; inductor modeling; metallization capacitances; millimeter-wave CMOS circuits; millimeter-wave design; oscillators; size 90 nm; systematic transistor; CMOS technology; Capacitance; Circuit simulation; Flexible printed circuits; Inductors; Millimeter wave circuits; Millimeter wave measurements; Millimeter wave technology; Millimeter wave transistors; Semiconductor device modeling; High-frequency MOS models; MOS device capacitances; inductor models; interconnect models; millimeter-wave circuit design; millimeter-wave layout techniques;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2008.2011031
