Title :
A low-threshold high-efficiency injection laser of semiplanar geometry
Author_Institution :
RCA Electronic Components, Somerville, NJ, USA
fDate :
5/1/1968 12:00:00 AM
Keywords :
Diodes; Doping profiles; Gallium arsenide; Geometrical optics; P-n junctions; Surfaces; Tail; Thermal resistance; Threshold current; Zinc;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1968.1075324
