Title :
Ultra low-noise performance of 0.15-micron gate GaAs MESFET´s made by direct ion implantation for low-cost MMIC´s applications
Author :
Feng, M. ; Laskar, J. ; Kruse, J. ; Neidhard, R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
5/1/1992 12:00:00 AM
Abstract :
The high-speed and noise performance of 0.15- mu m gate GaAs MESFETs for microwave and millimeter-wave IC applications is reported. The best extrinsic f/sub t/ is 109 GHz without correction for pad parasitics, which is equivalent to an intrinsic f/sub t/ of 134 GHz. The 0.15- mu m*200- mu gate GaAs MESFET achieved a 0.6-dB noise figure with a 17-dB associated gain at 10 GHz and a 0.9-dB noise figure with a 13-dB associated gain at 18 GHz. The measured noise figure and associated gain are the best reported for GaAs MESFETs and are comparable to the best noise/gain performance of HEMTs and P-HEMTs.<>
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; electron device noise; field effect integrated circuits; gallium arsenide; ion implantation; 0.15 micron; 0.6 to 0.9 dB; 10 to 134 GHz; 13 to 17 dB; GaAs; MESFET; MIMIC; direct ion implantation; high-speed; low cost MMIC; millimeter-wave IC; monolithic microwave IC; submicron gate; ultra low noise performance; Application specific integrated circuits; Gain measurement; Gallium arsenide; High speed integrated circuits; Integrated circuit noise; MESFET integrated circuits; Microwave integrated circuits; Noise figure; Noise measurement; Performance gain;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
