Title :
Electron interference and spin transport in nanowire structures
Author :
Schapers, Thomas
Author_Institution :
Peter Grunberg Inst. (PGI-9), Forschungszentrum Julich, Julich, Germany
Abstract :
Electron interference effects and spin transport are investigated in semiconductor nanowires. In InAs bulk nanowires, grown by molecular beam epitaxy, the phase coherence length is determined by analyzing universal conductance fluctuations. Information on spin-orbit scattering is obtained by employing the weak antilocalization effect. In GaAs/InAs core/shell nanowires magnetic flux periodic oscillations are observed in the conductance under application of an axially oriented magnetic field. These oscillations are explained by the presence of quantized closed-loop states in the InAs shell.
Keywords :
III-V semiconductors; core-shell nanostructures; electrical conductivity; fluctuations; gallium arsenide; indium compounds; magnetic flux; molecular beam epitaxial growth; nanofabrication; nanowires; semiconductor epitaxial layers; semiconductor growth; spin polarised transport; spin-orbit interactions; GaAs-InAs; antilocalization effect; axially oriented magnetic field; conductance fluctuations; core-shell nanowires; electron interference effects; magnetic flux periodic oscillations; molecular beam epitaxy; phase coherence length; quantized closed-loop states; semiconductor nanowires; spin transport; spin-orbit scattering; Gallium arsenide; Magnetic cores; Magnetic separation; Nanoscale devices; Oscillators; Scattering; Temperature measurement; III-V semiconductors; magneto-transport; nanowires; spin-orbit coupling;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4799-6867-1
DOI :
10.1109/COMMAD.2014.7038640
