Title :
Effect of V/III ratio on the structural quality of InAs nanowires
Author :
Zhi Zhang ; Zhen-Yu Lu ; Hong-Yi Xu ; Ping-Ping Chen ; Wei Lu ; Jin Zou
Author_Institution :
Mater. Eng., Univ. of Queensland, Brisbane, QLD, Australia
Abstract :
In this study, the effect of V/III ratio on the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. It is found that, by tuning the V/III ratio, the structural quality of InAs nanowires can be controlled, and defect-free wurtzite structured InAs nanowires have been achieved under low V/III ratio growth.
Keywords :
III-V semiconductors; indium compounds; molecular beam epitaxial growth; nanofabrication; nanowires; semiconductor epitaxial layers; semiconductor growth; InAs; defect-free wurtzite structure; gold catalyzed nanowires; molecular beam epitaxy; structural quality; Indium; Molecular beam epitaxial growth; Nanowires; Scanning electron microscopy; Substrates; Tuning; Electron microscopy; InAs nanowires; MBE;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4799-6867-1
DOI :
10.1109/COMMAD.2014.7038642
