DocumentCode :
1132910
Title :
Developing device models
Author :
Hu, Bo ; Wakayama, Cherry ; Zhou, Lili ; Shi, C. -J Richard
Author_Institution :
Mixed-Signal CAD Res. Lab., Univ. of Washington, Seattle, WA, USA
Volume :
21
Issue :
4
fYear :
2005
Firstpage :
6
Lastpage :
11
Abstract :
Describes rapid implementation of semiconductor device models in SPICE using an MCAST compact model compiler. Device-model development is a vital component of circuit design and is traditionally a very challenging task. To overcome this challenge, it would be beneficial for model developers to use high-level behavioral language and model compilers. Implementations of MOS level-3 models and BSIMSOI models have demonstrated that this behavioral modeling approach is more efficient and practical than traditional C/FORTRAN methodologies and could save future model developers a significant amount of time and cost in implementation and maintenance. With the further enhancement and wider acceptance of this new approach, it is expected to promote more and better device models in the near future.
Keywords :
MOSFET; SPICE; hardware description languages; semiconductor device models; silicon-on-insulator; BSIMSOI models; MCAST compact model compiler; MOS level-3 models; SOI MOSFET; SPICE; VHDL-AMS behavioral modeling approach; high-level behavioral language; semiconductor device models; Circuit simulation; Circuit synthesis; Electronics industry; Equations; Hardware design languages; MOS devices; Manuals; Mathematical model; Physics; Semiconductor device modeling;
fLanguage :
English
Journal_Title :
Circuits and Devices Magazine, IEEE
Publisher :
ieee
ISSN :
8755-3996
Type :
jour
DOI :
10.1109/MCD.2005.1492712
Filename :
1492712
Link To Document :
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