Investigation of mid-infrared AlInSb LEDs with an n-i-p structure

Author

Ying Ding ; Meriggi, Laura ; Steer, Matthew J. ; Thayne, Iain G. ; MacGregor, Calum ; Sorel, Marc ; Ironside, Charles N.

Author_Institution

Sch. of Eng., Univ. of Glasgow, Glasgow, UK

fYear

2014

fDate

14-17 Dec. 2014

Firstpage

38

Lastpage

40

Abstract

We report on the investigation on mid-infrared AlInSb LEDs with an n-i-p structure. Compared to the conventional AlInSb LEDs with a p-i-n structure, a better current spreading corresponding to a uniform current distribution in the active region is expected in the n-i-p structure because of a high electron mobility in the n-type AlInSb material. The output optical power of laterally injected LEDs were investigated as a function of the device geometry by COMSOL simulations and confirmed by experimental results.

Keywords

III-V semiconductors; aluminium compounds; electron mobility; indium compounds; light emitting diodes; p-i-n diodes; semiconductor device models; COMSOL simulations; active region; current spreading; device geometry; electron mobility; laterally injected LED; mid-infrared AlInSb LED; n-i-p structure; n-type AlInSb material; output optical power; uniform current distribution; Current density; Educational institutions; Electrodes; Geometry; Light emitting diodes; Materials; PIN photodiodes; Electroluminescence (EL); Light emitting diodes (LEDs); Mid-infrared; p-i-n diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4799-6867-1

Type

conf

DOI

10.1109/COMMAD.2014.7038646

Filename

7038646