Characterisation of SiNx-HgCdTe interface in metal-insulator-semiconductor structure

Author

Zhang, J. ; Umana-Membreno, G.A. ; Gu, R. ; Lei, W. ; Antoszewski, J. ; Dell, J.M. ; Faraone, L.

Author_Institution

Sch. of Electr., Electron. & Comput. Eng., Univ. of Western Australia, Crawley, WA, Australia

fYear

2014

fDate

14-17 Dec. 2014

Firstpage

64

Lastpage

66

Abstract

In this paper, we report results of a study of SiN_x films deposited on HgCdTe epitaxial layers. Hydrogenated amorphous SiN_x films were deposited by inductively-coupled plasma-enhanced chemical vapour deposition at relatively low substrate temperatures (80°C-100°C). The capacitance-voltage characteristics of SiN_x/n-Hg_0.68Cd_0.32Te metal-insulator-semiconductor structures indicated that Si-rich SiN_x films deposited at 100°C can be employed as electrical passivation layers.

Keywords

II-VI semiconductors; MIS structures; amorphous state; cadmium compounds; hydrogen; mercury compounds; passivation; plasma CVD; semiconductor epitaxial layers; silicon compounds; SiN_x-HgCdTe; capacitance-voltage characteristics; electrical passivation layers; epitaxial layers; hydrogenated amorphous films; inductively-coupled plasma-enhanced chemical vapour deposition; metal-insulator-semiconductor structure; substrate temperatures; temperature 80 degC to 100 degC; Films; Passivation; Plasma temperature; Silicon nitride; Substrates; Temperature measurement; hydrogenated silicon nitride; interface states; mercury compounds; surface passivation;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4799-6867-1

Type

conf

DOI

10.1109/COMMAD.2014.7038653

Filename

7038653