Title :
Crosstalk effects between metal and polysilicon lines in CMOS integrated circuits
Author :
Roca, Miquel ; Moll, Francesc ; Rubio, Antonio
Author_Institution :
Dept. of Phys., Univ. Illes Balears, Palma de Mallorca, Spain
fDate :
8/1/1994 12:00:00 AM
Abstract :
In this work the problem of crosstalk between a metal and a polysilicon line is considered. The polysilicon line is modeled as an RC distributed transmission line, and the metal fine is considered as a single node capacitively coupled to the polysilicon line. The voltage response in the polysilicon line to a step transition in the metal line is calculated, and the influence of geometrical aspects, resistance of polysilicon, and evolution of waveform with distance from the driver´s end of the poly line are investigated
Keywords :
CMOS integrated circuits; crosstalk; distributed parameter networks; transmission line theory; CMOS integrated circuits; RC distributed transmission line; capacitively coupled line; geometrical aspects; metal line; polysilicon lines; resistance; waveform evolution; Aircraft; Antennas and propagation; CMOS integrated circuits; Coupling circuits; Crosstalk; Electromagnetic scattering; Radar scattering; Semiconductor device modeling; Weapons; Wire;
Journal_Title :
Electromagnetic Compatibility, IEEE Transactions on
