• DocumentCode
    1133123
  • Title

    Millimeter-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technology

  • Author

    Li, Hao ; Rein, Hans-Martin

  • Author_Institution
    Ruhr-Univ. Bochum, Germany
  • Volume
    38
  • Issue
    2
  • fYear
    2003
  • fDate
    2/1/2003 12:00:00 AM
  • Firstpage
    184
  • Lastpage
    191
  • Abstract
    Millimeter-wave voltage-controlled oscillators (VCOs) are presented which are fully integrated in a SiGe bipolar production technology. The low-cost differential circuits have been designed and optimized for low phase noise and wide tuning range. As an example, by varying the bias voltage of the on-chip varactor, the oscillation frequency can be changed from 36 to 46.9 GHz (i.e., by 26%). In this wide frequency range, phase noise between -107 and -110dBc/Hz at 1-MHz offset frequency and single-ended voltage swing of about 0.95Vpp ±10% (differential: 1.9Vpp) were measured. The circuit consumes 280mW at -5.5-V supply voltage. The high oscillation frequency and low phase noise at wide tuning range are record values for fully integrated oscillators in Si-based technologies. The basic oscillator was then extended by a cascode stage as an output buffer. Now the VCO performance is no longer degraded if nonperfectly terminated transmission lines are driven. Thus, the chip can be mounted in a low-cost socket; however, at the cost of increased phase noise and power consumption.
  • Keywords
    Ge-Si alloys; bipolar MIMIC; circuit optimisation; circuit tuning; integrated circuit noise; millimetre wave oscillators; phase noise; semiconductor materials; voltage-controlled oscillators; -5.5 V; 0.35 micron; 280 mW; 36 to 46.9 GHz; SiGe; SiGe bipolar production technology; VCO performance; bias voltage variation; cascode stage; fully integrated oscillators; high oscillation frequency; low phase noise; low-cost differential circuits; low-cost socket; millimeter-wave voltage-controlled oscillators; mm-wave VCOs; nonperfectly terminated transmission lines; on-chip varactor; oscillation frequency; output buffer; power consumption; single-ended voltage swing; wide tuning range; Circuit optimization; Frequency; Germanium silicon alloys; Integrated circuit technology; Millimeter wave integrated circuits; Millimeter wave technology; Phase noise; Production; Silicon germanium; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2002.807404
  • Filename
    1175498