DocumentCode :
113315
Title :
An investigation of MWIR, AlInSb LEDs based on double heterostructures and multiple quantum wells
Author :
Ying Ding ; Meriggi, Laura ; Steer, Matthew J. ; Bulashevich, Kirill ; Thayne, Iain G. ; MacGregor, Calum ; Sorel, Marc ; Ironside, Charles N.
Author_Institution :
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
fYear :
2014
fDate :
14-17 Dec. 2014
Firstpage :
124
Lastpage :
126
Abstract :
Mid-infrared LEDs based on AlInSb double heterostrucutre and multiple quantum well active regions have been simulated and investigated using the SimuLED software package from STR. The simulation results indicate that the double heterostrucutre and multiple quantum well active regions offer higher carrier injection efficiency and energy conversion. This translates into an output power and wall-plug efficiency that are three and two times higher, respectively, than a conventional homojunction active region.
Keywords :
aluminium compounds; indium compounds; light emitting diodes; semiconductor device models; semiconductor heterojunctions; AlInSb; AlInSb double heterostrucutre; MWIR AlInSb LED; SimuLED software package; carrier injection efficiency; energy conversion; multiple quantum well active regions; output power; wall-plug efficiency; DH-HEMTs; Educational institutions; Gallium arsenide; Light emitting diodes; Power generation; Quantum well devices; Substrates; Electroluminescence (EL); Light emitting diodes (LEDs); Mid-infrared; Quantum wells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4799-6867-1
Type :
conf
DOI :
10.1109/COMMAD.2014.7038668
Filename :
7038668
Link To Document :
بازگشت