An investigation of MWIR, AlInSb LEDs based on double heterostructures and multiple quantum wells

Author

Ying Ding ; Meriggi, Laura ; Steer, Matthew J. ; Bulashevich, Kirill ; Thayne, Iain G. ; MacGregor, Calum ; Sorel, Marc ; Ironside, Charles N.

Author_Institution

Sch. of Eng., Univ. of Glasgow, Glasgow, UK

fYear

2014

fDate

14-17 Dec. 2014

Firstpage

124

Lastpage

126

Abstract

Mid-infrared LEDs based on AlInSb double heterostrucutre and multiple quantum well active regions have been simulated and investigated using the SimuLED software package from STR. The simulation results indicate that the double heterostrucutre and multiple quantum well active regions offer higher carrier injection efficiency and energy conversion. This translates into an output power and wall-plug efficiency that are three and two times higher, respectively, than a conventional homojunction active region.

Keywords

aluminium compounds; indium compounds; light emitting diodes; semiconductor device models; semiconductor heterojunctions; AlInSb; AlInSb double heterostrucutre; MWIR AlInSb LED; SimuLED software package; carrier injection efficiency; energy conversion; multiple quantum well active regions; output power; wall-plug efficiency; DH-HEMTs; Educational institutions; Gallium arsenide; Light emitting diodes; Power generation; Quantum well devices; Substrates; Electroluminescence (EL); Light emitting diodes (LEDs); Mid-infrared; Quantum wells;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4799-6867-1

Type

conf

DOI

10.1109/COMMAD.2014.7038668

Filename

7038668