Title :
Quantum cascade detectors in very long wave infrared
Author :
Liu, J.Q. ; Zhai, S.Q. ; Liu, F.Q. ; Liu, S.M. ; Wang, L.J. ; Zhang, J.C. ; Zhuo, N. ; Wang, Z.G.
Author_Institution :
Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China
Abstract :
Very long wave (> 14μm) infrared quantum cascade detectors based on III-V materials are presented. Thanks to the optimum design of electron transport mechanism, high detectivity is obtained without decreasing device responsivity. For the 14.2 μm QCD, a work temperature up to 82K is obtained with a peak responsivity about 0.95 mA/W and detectivity of 1×108 Jones. Peak responsivities is 2.34 mA/W and Johnson noise limited detectivities is 1×011 Jones, at 15K for the 18 μm devices.
Keywords :
electron transport theory; infrared detectors; thermal noise; III-V material; Johnson noise; QCD; electron transport mechanism; infrared quantum cascade detector; size 14.2 mum; size 18 mum; temperature 15 K; very long wave infrared detector; Dark current; Detectors; Gallium arsenide; Noise; Photodetectors; Temperature measurement; Quantum cascade detector; molecular beam epitaxy; photodetectors; very long wave infrared;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4799-6867-1
DOI :
10.1109/COMMAD.2014.7038669
