DocumentCode
113317
Title
Femtosecond spectrally resolved nonlinear spectroscopy: Study of Si quantum dots
Author
Vuong Van Cuong ; Nguyen Dai Hung ; Khuong Ba Dinh ; Lap Van Dao
Author_Institution
Hanoi Nat. Univ. of Educ., Hanoi, Vietnam
fYear
2014
fDate
14-17 Dec. 2014
Firstpage
130
Lastpage
132
Abstract
We report on the use of femtosecond spectrally resolved two colour three-pulse nonlinear spectroscopy to study the carrier relaxation in Si quantum dots. The third-order polarization for a coupled two-level system is applied for theoretical simulations. The optical phonon-assisted transition leads to a fast decay (20 fs) of hot carriers.
Keywords
elemental semiconductors; high-speed optical techniques; hot carriers; semiconductor quantum dots; silicon; Si; Si quantum dots; carrier relaxation; coupled two-level system; femtosecond spectrally resolved nonlinear spectroscopy; femtosecond spectrally resolved two colour three-pulse nonlinear spectroscopy; hot carriers; optical phonon-assisted transition; third-order polarization; Optical mixing; Phonons; Quantum dots; Silicon; Sociology; Ultrafast optics; Four-wave mixing; Measurement by laser beam; Optical variables measurement; Silicon photonics;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on
Conference_Location
Perth, WA
Print_ISBN
978-1-4799-6867-1
Type
conf
DOI
10.1109/COMMAD.2014.7038670
Filename
7038670
Link To Document