DocumentCode
1133196
Title
Turn-Off Characteristics of Power Transistors Using Emitter-Open Turn-Off
Author
Chen, Dan Y. ; Jackson, Barry
Author_Institution
Virginia Polytechnic Institute and State University
Issue
3
fYear
1981
fDate
5/1/1981 12:00:00 AM
Firstpage
386
Lastpage
391
Abstract
As compared with conventional reverse-biased turn-off, emitteropen turn-off provides superior transistor turn-off characteristics. Not only are the storage time and the fall time of the power transsistors much reduced, but also the device reverse-biased second breakdown phenomenon, commonly associated with turn-off of inductive load, is eliminated. Furthermore the storage time tolerance due to device variation and temperature change is minimized.
Keywords
Electric breakdown; Energy efficiency; Low voltage; Power electronics; Power transistors; Reliability; Switching circuits; Teleprinting; Temperature; Turning;
fLanguage
English
Journal_Title
Aerospace and Electronic Systems, IEEE Transactions on
Publisher
ieee
ISSN
0018-9251
Type
jour
DOI
10.1109/TAES.1981.309066
Filename
4102508
Link To Document