An investigation into signal stability during measurement of AlGaN/GaN transistor-based chemical sensors

Author

Khir, F.L.M. ; Lyons, A. ; Myers, M. ; Baker, M.V. ; Nener, B.D. ; Parish, G.

Author_Institution

Sch. of Electr., Electron., & Comput. Eng., Univ. of Western Australia, Crawley, WA, Australia

fYear

2014

fDate

14-17 Dec. 2014

Firstpage

177

Lastpage

180

Abstract

AlGaN/GaN transistor-based sensors are highly sensitive to changes in charge at the semiconductor-solution interface. Significant care controlling the measurement conditions is required for stable and robust sensor operation. In this study various aspects of measurement protocol were investigated in order to minimise the drift in sensor output during measurements. The most significant factors were found to be the use of buffered ionic solutions and the use of a Faraday cage.

Keywords

III-V semiconductors; aluminium compounds; chemical sensors; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; AlGaN-GaN transistor-based chemical sensor measurement; Faraday cage; buffered ionic solutions; measurement conditions; measurement protocol; semiconductor-solution interface; sensor output; signal stability; stable sensor operation; Aluminum gallium nitride; Batteries; Battery charge measurement; Gallium nitride; Noise; Sensor phenomena and characterization; AlGaN/GaN; chemical sensor; drift; noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4799-6867-1

Type

conf

DOI

10.1109/COMMAD.2014.7038685

Filename

7038685