Nanoindentation of Si1−xGex thin films prepared by biased target ion beam deposition

Author

Ruijing Ge ; Xiaowei Hou ; Brookshire, Kirsten ; Krishnan, N. Radha ; Silva, Dilusha ; Bumgarner, John ; Yinong Liu ; Faraone, Lorenzo ; Martyniuk, Mariusz

Author_Institution

Sch. of Electr., Electron. & Comput. Eng., Univ. of Western Australia, Crawley, WA, Australia

fYear

2014

fDate

14-17 Dec. 2014

Firstpage

210

Lastpage

213

Abstract

The mechanical properties of Si_1-xGe_x thin films are studied via nanoindentation. The Si_1-xGe_x thin films are prepared with a biased target ion beam deposition (BTIBD) method. We investigate the effect of varying the Si to Ge composition ratio on the elastic modulus and hardness of the resulting alloyed films. In comparison to pure BTIBD Si (E_si = 154GPa, H_si = 9.9GPa), for Si_1-xGe_x a decreasing trend in Young´s modulus and hardness is observed to be associated with the increase in Ge content, and for Si_0.5Ge_0.5 the values of 139 GPa and 8.4GPa are found to represent the Young´s modulus and hardness, respectively.

Keywords

Ge-Si alloys; Young´s modulus; hardness; ion beam assisted deposition; nanoindentation; semiconductor materials; semiconductor thin films; Si_1-xGe_x; Young´s modulus; alloyed films; biased target ion beam deposition method; composition ratio; elastic modulus; hardness; nanoindentation; thin films; Films; Germanium; Ion beams; Silicon; Substrates; Young´s modulus; BTIBD; amorphous silicon; germanium; hardness; nanoindentation; young´s modulus;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4799-6867-1

Type

conf

DOI

10.1109/COMMAD.2014.7038692

Filename

7038692