Single GaAs/AlGaAs nanowire photoconductive terahertz detectors

Author

Kun Peng ; Parkinson, Patrick ; Lan Fu ; Qiang Gao ; Nian Jiang ; Ya-Nan Guo ; Fan Wang ; Joyce, Hannah J. ; Boland, Jessica L. ; Johnston, Michael B. ; Hark Hoe Tan ; Jagadish, Chennupati

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

2014

fDate

14-17 Dec. 2014

Firstpage

221

Lastpage

222

Abstract

Photoconductive terahertz detectors based on single GaAs/AlGaAs core-shell nanowire have been designed and fabricated. The devices were characterised in a terahertz time-domain spectroscopy system, showing excellent sensitivity comparable to the standard bulk ion-implanted InP receiver, with a detection bandwidth of 0.1 ~ 0.6 THz. Finite-difference time-domain simulations were performed to understand the origin of the narrow bandwidth of current detectors as well as optimize antenna designs to improve detector performance.

Keywords

III-V semiconductors; aluminium compounds; core-shell nanostructures; gallium arsenide; ion implantation; nanowires; photoconductivity; photodetectors; terahertz wave detectors; terahertz wave spectra; GaAs-AlGaAs; antenna designs; bandwidth 0.1 THz to 0.6 THz; core-shell nanowire; current detectors; detection bandwidth; finite difference time-domain simulations; ion-implanted receiver; single nanowire photoconductive terahertz detectors; terahertz time-domain spectroscopy system; Bandwidth; Detectors; Educational institutions; Gallium arsenide; Sensitivity; Spectroscopy; Time-domain analysis; nanophotonics; nanoscale devices; nanowires; terahertz detectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4799-6867-1

Type

conf

DOI

10.1109/COMMAD.2014.7038695

Filename

7038695