DocumentCode :
113343
Title :
Band-to-band tunnelling (BTBT) in HgCdTe-based nBn detectors for LWIR applications
Author :
Akhavan, N.D. ; Jolley, G. ; Membreno, G. Umana ; Antoszewski, J. ; Faraone, L.
Author_Institution :
Microelectron. Res. Group, Univ. of Western Australia, Crawley, WA, Australia
fYear :
2014
fDate :
14-17 Dec. 2014
Firstpage :
223
Lastpage :
225
Abstract :
In this paper we present a theoretical study on the influence of band-to-band-tunnelling (BTBT) in HgCdTe-based nBn detectors for longwave infrared (LWIR) applications. Numerical modelling shows that BTBT strongly depends on the barrier parameters and degrades the detectivity of LWIR nBn detectors. Nevertheless, exploring alternative barrier materials or engineering designs which are able to suppress the BTBT in LWIR nBn detectors is necessary in order to achieve the ultimate performance of HgCdTe nBn detectors for LWIR applications.
Keywords :
II-VI semiconductors; cadmium compounds; infrared detectors; mercury compounds; tunnelling; HgCdTe; HgCdTe-based nBn detectors; LWIR applications; band-to-band tunnelling; barrier parameters; longwave infrared applications; numerical modelling; Approximation methods; Dark current; Detectors; Infrared detectors; Materials; Numerical models; Tunneling; HgCdTe; LWIR; band-to-band-tunneling (BTBT); barrier infrared detectors; nBn; numerical modelling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4799-6867-1
Type :
conf
DOI :
10.1109/COMMAD.2014.7038696
Filename :
7038696
Link To Document :
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