Title :
1.3 mu m InGaAsP Fabry-Perot lasers with reduced pulse jitter and power penalty
Author :
Cheng, W.H. ; Dugan, J.M. ; Miller, J.C. ; Renner, D. ; Su, C.B.
Author_Institution :
Alcatel Network Syst., Richardson, TX, USA
fDate :
7/2/1992 12:00:00 AM
Abstract :
The pulse jitter and bit-error-rate performances of a 1.2 Gbit/s lightwave transmission system using 1.3 mu m InGaAsP Fabry-Perot (FP) lasers with Zn-doped active layers were investigated experimentally. It was found that the pulse jitter and the resulting power penalty were strongly dependent on the carrier lifetime of the lasers. This suggests that doped-active FP lasers with decreased carrier lifetime may be usable in a wider range of gigabit lightwave applications than previously considered.
Keywords :
III-V semiconductors; carrier lifetime; digital communication systems; error statistics; gallium arsenide; gallium compounds; indium compounds; laser beam applications; laser transitions; optical communication equipment; semiconductor junction lasers; 1.2 Gbit/s; 1.3 micron; BER performance; Fabry-Perot lasers; InGaAsP; Zn-doped active layers; bit-error-rate; carrier lifetime; gigabit lightwave applications; lightwave transmission system; power penalty; pulse jitter; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920849
