DocumentCode
1133458
Title
1.3 mu m InGaAsP Fabry-Perot lasers with reduced pulse jitter and power penalty
Author
Cheng, W.H. ; Dugan, J.M. ; Miller, J.C. ; Renner, D. ; Su, C.B.
Author_Institution
Alcatel Network Syst., Richardson, TX, USA
Volume
28
Issue
14
fYear
1992
fDate
7/2/1992 12:00:00 AM
Firstpage
1337
Lastpage
1338
Abstract
The pulse jitter and bit-error-rate performances of a 1.2 Gbit/s lightwave transmission system using 1.3 mu m InGaAsP Fabry-Perot (FP) lasers with Zn-doped active layers were investigated experimentally. It was found that the pulse jitter and the resulting power penalty were strongly dependent on the carrier lifetime of the lasers. This suggests that doped-active FP lasers with decreased carrier lifetime may be usable in a wider range of gigabit lightwave applications than previously considered.
Keywords
III-V semiconductors; carrier lifetime; digital communication systems; error statistics; gallium arsenide; gallium compounds; indium compounds; laser beam applications; laser transitions; optical communication equipment; semiconductor junction lasers; 1.2 Gbit/s; 1.3 micron; BER performance; Fabry-Perot lasers; InGaAsP; Zn-doped active layers; bit-error-rate; carrier lifetime; gigabit lightwave applications; lightwave transmission system; power penalty; pulse jitter; semiconductor lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920849
Filename
149392
Link To Document